Effects of prewells on transport in p-type resonant tunneling diodes
Identifieur interne : 011B44 ( Main/Repository ); précédent : 011B43; suivant : 011B45Effects of prewells on transport in p-type resonant tunneling diodes
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Abstract
We investigate the transport of holes through AlAs/In0.10Ga0.90As resonant tunneling diodes which utilize InxGa1-xAs prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localization) of charges in the prewell and the formation of direct heavy (light) hole to heavy (light) hole conduction channels as a consequence. © 2000 American Institute of Physics.
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Wei</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Indiana University, Bloomington, Indiana 47405</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Department of Physics, Indiana University, Bloomington</wicri:cityArea></affiliation></author><author><name sortKey="Lin, S Y" uniqKey="Lin S">S. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Klem, J F" uniqKey="Klem J">J. F. Klem</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0451347</idno><date when="2000-10-23">2000-10-23</date><idno type="stanalyst">PASCAL 00-0451347 AIP</idno><idno type="RBID">Pascal:00-0451347</idno><idno type="wicri:Area/Main/Corpus">012507</idno><idno type="wicri:Area/Main/Repository">011B44</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Localized states</term><term>Resonant tunneling diodes</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530M</term><term>8530K</term><term>7320D</term><term>8530V</term><term>7323H</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Gallium arséniure</term><term>Indium composé</term><term>Diode effet tunnel résonnant</term><term>Puits quantique semiconducteur</term><term>Etat localisé</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate the transport of holes through AlAs/In<sub>0.10</sub>Ga<sub>0.90</sub>As resonant tunneling diodes which utilize In<sub>x</sub>Ga<sub>1-x</sub>As prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localization) of charges in the prewell and the formation of direct heavy (light) hole to heavy (light) hole conduction channels as a consequence. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>77</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of prewells on transport in p-type resonant tunneling diodes</s1></fA08><fA11 i1="01" i2="1"><s1>LEWIS (R. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>WEI (H. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (S. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>KLEM (J. F.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Indiana University, Bloomington, Indiana 47405</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>2722-2724</s1></fA20><fA21><s1>2000-10-23</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0451347</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate the transport of holes through AlAs/In<sub>0.10</sub>Ga<sub>0.90</sub>As resonant tunneling diodes which utilize In<sub>x</sub>Ga<sub>1-x</sub>As prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. 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